CLY2 datasheet(2/7 Pages) SIEMENS

номер детали	CLY2

подробное описание детали	GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

PDF	7 Pages

Scroll/Zoom	100%

производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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2 / 7 page

GaAs FET

CLY 2

________________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 2/77

17.12.96

HL EH PD 21

Electrical characteristics (TA = 25°C , unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

VDS = 3 V VGS = 0 V

IDSS

300

450

650

Drain-source pinch-off current

VDS = 3 V VGS = -3.8 V

ID(p)

-5

µA

Gate pinch-off current

VDS = 3 V VGS = -3.8 V

IG(p)

-5

µA

Pinch-off Voltage

VDS = 3 V

ID = 50 µA

VGS(p)

-3.8

-2.8

-1.8

Small Signal Gain

VDS = 3 V

ID = 180 mA

f = 1.8 GHz

Pin = -5 dBm

15.5

Small Signal Gain

**)

VDS = 3 V

ID = 180 mA

f = 1.8 GHz

Pin = -5 dBm

14.5

Output Power

VDS = 3V

ID = 180 mA f = 1.8 GHz

Pin = 10 dBm

22.5

23.5

dBm

1dB-Compression Point

VDS = 3 V

ID = 180 mA

f = 1.8 GHz

P1dB

23.5

dBm

1dB-Compression Point

VDS = 5 V

ID = 180 mA

f = 1.8 GHz

P1dB

27.0

dBm

Power Added Efficiency

VDS = 3V

ID = 180mA

f = 1.8 GHz

Pin = 10 dBm

PAE

-55

*) Matching conditions for maximum small signal gain ( not identical with power

matching conditions ! )

**) Power matching conditions: f = 1.8 GHz

Source Match:

ms: MAG = 0.74, ANG 132°; Load Match:

ml: ;MAG 0.61, ANG -153°

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