RJM0404JSC datasheet(7/12 Pages) RENESAS

номер детали	RJM0404JSC

подробное описание детали	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

PDF	12 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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7 / 12 page

RJM0404JSC

Preliminary

R07DS0338EJ0500 Rev.5.00

Page 7 of 11

May 11, 2011

 MOS4, 5, 6 (Pch)

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Drain Current ID (A)

Static Drain to Source On State Resistance

vs. Drain Current

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

100

−4

−8

−12

−16

−20

Gate to Source Voltage VGS (V)

Static Drain to Source On State Resistance vs.

Gate to Source Voltage

−100

−10

−1

−10

−100

−0.1

−1000

−0.1

−0.01

−20

−12

−16

−8

−4

−2

−6

−8

−10

−3.0 V

−3.5 V

VGS = −2.5 V

−4.5 V

−10 V

−10

−1

−0.1

−0.01

−0.001

−0.0001

−1

−2

−3

−5

−4

−1

−10

100

−100

1000

100

−50 −25 0 25 50 75 100 125 150 175

Tc = 25

°C

Pulse Test

Tc = 150

°C

−40°C

Pulse Test

VDS = −10 V

VGS = −4.5 V

−10 V

Tc = 150

°C

−40°C

ID = −10 A

Pulse Test

ID = −10 A

Pulse Test

VGS = −4.5 V

−10 V

Tc = 25

°C

1 shot Pulse

DC Operation

PW = 10 ms

Operation

in this area

is limited R

DS(on)

Tc = 25

°C

Pulse Test

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