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RJH60M2DPE датащи(PDF) 1 Page - Renesas Technology Corp |
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RJH60M2DPE датащи(HTML) 1 Page - Renesas Technology Corp |
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1 / 4 page ![]() R07DS0531EJ0100 Rev.1.00 Page 1 of 3 Aug 30, 2011 Preliminary Datasheet RJH60M2DPE 600 V - 12 A - IGBT Application: Inverter Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load) Outline 1. Gate 2. Collector 3. Emitter 4. Collector RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 3 4 C G E Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES ±30 V Tc = 25°C IC 25 A Collector current Tc = 100°C IC 12 A Collector peak current ic(peak) Note1 50 A Collector to emitter diode forward current iDF 12 A Collector to emitter diode forward peak current iD(peak) Note1 50 A Collector dissipation PC Note2 63 W Junction to case thermal resistance (IGBT) j-c Note2 1.98 °C/ W Junction to case thermal resistance (Diode) j-cd Note2 4.2 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C R07DS0531EJ0100 Rev.1.00 Aug 30, 2011 |
Аналогичный номер детали - RJH60M2DPE |
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Аналогичное описание - RJH60M2DPE |
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