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RJH60D2DPP-M0 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали RJH60D2DPP-M0
подробное описание детали  Silicon N Channel IGBT Application: Inverter
PDF  8 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60D2DPP-M0 датащи(HTML) 3 Page - Renesas Technology Corp

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RJH60D2DPP-M0
Preliminary
R07DS0160EJ0300 Rev.3.00
Page 3 of 7
Nov 16, 2010
Main Characteristics
50
40
30
20
10
IGBT Output Characteristics (Typical)
Collector to Emitter Voltage VCE (V)
Case Temperature Tc (°C)
Maximum DC Collector Current vs.
Case Temperature
30
20
15
10
5
0
02550
100
75
125 150175
02550
100
75
125 150175
Collector to Emitter Voltage VCE (V)
Turn-off SOA
0
200
400
600
800
Case Temperature Tc (°C)
Collector Dissipation vs.
Case Temperature
30
25
25
20
15
10
5
0
60
50
40
30
20
10
0
IGBT Output Characteristics (Typical)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Maximum Safe Operation Area
100
10
0.1
1
0.01
1
100
10
1000
Tc = 25
°C
Single pulse
100
μs
PW
=
10
μs
0
50
40
30
20
10
012
4
3
5
012
4
3
5
Ta = 25°C
Pulse Test
V
GE = 8 V
10 V
12 V
15 V
18 V
Ta = 150°C
Pulse Test
V
GE = 8 V
10 V
12 V
15 V
18 V



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