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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WCD20C60 датащи(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WCD20C60 датащи(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 5 page  Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance W W W WCD20C60 CD20C60 CD20C60 CD20C60 2/5 Electrical Characteristics (TC=25℃,unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max IDRM Repetitive Peak Off-State Current VAK=VDRM TC=25℃ TC=125℃ - - 10 μA - - 200 μA VTM Peak On-State Voltage (1) ITM=20A, tp=380㎲ - 1.3 1.6 V IGT Gate Trigger Current (2) VAK=6V(DC),RL=10Ω TC=25℃ - - 15 mA VGT Gate Trigger Voltage (2) VD=6V(DC),RL=10Ω TC=25℃ - - 1.5 V VGD Non-Trigger Gate Voltage (1) VAK=12V,RL=100Ω TC=125℃ 0.2 - - V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD=67% VDRM, gate open TJ=125℃ 200 - - V/㎲ IH Holding Current IT=100mA, Gate Open TC=25℃ - - 20 mA *Notes: *Notes: *Notes: *Notes: 1 Pulse Width ≤1.0ms,Duty cycle≤1% 2 RGK Current is not Included in measurement. |
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