NP40N10YDF, NP40N10VDF, NP40N10PDF

Chapter Title

R07DS0361EJ0100 Rev.1.00

Page 9 of 9

Jun 07, 2011

TO-263 (MP-25ZP) (Mass: 1.48 g TYP.)

No plating

7.88 MIN.

2.54

0.75 ±0.2

0.5

2

13

4

4.45 ±0.2

1.3 ±0.2

0.6 ±0.2

0 to 8˚

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.025

to 0.25

0.25

10.0 ±0.3

Equivalent Circuit

Source

Body

Diode

Gate

Drain

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.