2009. 5. 15

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SEMICONDUCTOR

TECHNICAL DATA

BAV23C

SILICON EPITAXIAL PLANAR DIODE

Revision No : 1

High Voltage Switching.

FEATURES

・Low Leakage Current.

・Repetitive Peak Reverse Voltage : V

・Low Capacitance : C

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

1. ANODE 1

2. ANODE 2

3. CATHODE

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P

7

2

1

3

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Type Name

Marking

Lot No.

U 4

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

-

-

1.0

V

-

-

1.25

Reverse Current

-

-

0.1

μA

-

-

100

Total Capacitance

-

-

2

pF

Reverse Recovery Time

-

-

50

ns

Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)

CHARACTERISTIC

SYMBOL RATING

UNIT

Maximum (Peak) Reverse Voltage

250

V

Reverse Voltage

200

V

Maximum (Peak) Forward Current

625

mA

Forward Current

Single diode loaded.

225

mA

Double diode loaded.

125

Surge Current

(Square wave)

t = 1μ

s

9

A

t = 100μ

s

3

A

1.7

A

t = 10ms

Power Dissipation

250*

mW

Junction Temperature

150

℃

Storage Temperature Range

-55～150

℃