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05355.R0 12/11

Page 2

PAM11SO803

TYPICAL DEVICE CHARACTERISTICS

PARAMETER

SYMBOL

VALuE

uNITS

Operating Temperature

T

L

-55 to 150

°C

Storage Temperature

T

STG

-55 to 150

°C

Peak Pulse Power (tp = 8/20µs) - See Figure 1

P

PP

1800

Watts

PART

NuMBER

DEVICE

MARkING

RATED

STAND-OFF

VOLTAGE

V

WM

VOLTS

MINIMuM

SNAPBACk

VOLTAGE

@50mA

V

(BR)

VOLTS

MAXIMuM

CLAMPING

VOLTAGE

(Fig. 2)

(Note 1-2)

@ 8/20µs

V

MAXIMuM

CLAMPING

VOLTAGE

(Line-Gnd)

@ 8/20µs

@I

V

C

VOLTS

MAXIMuM

LEAkAGE

CuRRENT

@V

WM

I

D

µA

MAXIMuM

CAPACITANCE

(Note 3)

@0V, 1MHz

C

pF

MAXIMuM

CAPACITANCE

(Note 4)

@0V, 1MHz

C

pF

PAM11SO803

PBC

3.0

2.8

18.0V@100.0A

11

2.0

25

12

NOTES

1. For an 8/20µs waveform, apply positive pulse to pin 1 or 8 to pin 2 or 3 (ground).

2. Measured between pin 1 or 8 to pin 2 or 3.

3. Measured between I/O pins and ground (pin 1 to 2).

4. Measured between I/O pins (pin 1 to 4).