BUP402 datasheet(2/7 Pages) SIEMENS

номер детали	BUP402

подробное описание детали	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

PDF	7 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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2 / 7 page

Semiconductor Group

Dec-02-1996

BUP 402

Maximum Ratings

Parameter

Symbol

Values

Unit

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

RthJC

≤ 0.83

K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 0.5 mA, Tj = 25 °C

VGE(th)

4.5

5.5

6.5

Collector-emitter saturation voltage

VGE = 15 V, IC = 20 A, Tj = 25 °C

VGE = 15 V, IC = 20 A, Tj = 125 °C

VGE = 15 V, IC = 40 A, Tj = 25 °C

VGE = 15 V, IC = 40 A, Tj = 125 °C

VCE(sat)

3.3

2.2

2.1

2.8

2.7

Zero gate voltage collector current

VCE = 600 V, VGE = 0 V, Tj = 25 °C

ICES

100

µA

Gate-emitter leakage current

VGE = 25 V, VCE = 0 V

IGES

100

AC Characteristics

Transconductance

VCE = 20 V, IC = 20 A

gfs

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

1040

1400

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

115

175

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

110

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