MAXIMUM RATINGS: (TC=25°C)

TIP140

TIP141

TIP142

SYMBOL TIP145

TIP146

TIP147

UNITS

Collector-Base Voltage

VCBO

60

80

100

V

Collector-Emitter Voltage

VCEO

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

10

A

Peak Collector Current

ICM

20

A

Base Current

IB

0.5

A

Power Dissipation

PD

125

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

1.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=Rated VCBO

1.0

mA

ICEO

2.0

mA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=30mA (TIP140, TIP145)

60

V

BVCEO

IC=30mA (TIP141, TIP146)

80

V

BVCEO

IC=30mA (TIP142, TIP147)

100

V

VCE(SAT)

IC=5.0A, IB=10mA

2.0

V

VCE(SAT)

IC=10A, IB=40mA

3.0

V

VBE(ON)

VCE=4.0V, IC=10A

3.0

V

VF

IF=10A

2.8

V

hFE

VCE=4.0V, IC=5.0A

1000

hFE

VCE=4.0V, IC=10A

500

ton

IC=10A, IB1=IB2=40mA, RL=3.0Ω

0.9

μs

toff

IC=10A, IB1=IB2=40mA, RL=3.0Ω

4.0

μs

TIP140

TIP141

TIP142

NPN

TIP145

TIP146

TIP147

PNP

SILICON POWER DARLINGTON

COMPLEMENTARY TRANSISTORS

TO-218 TRANSISTOR CASE

Central

Semiconductor Corp.

TM

R2 (1-August 2008)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP140,

TIP145 series types are Complementary Silicon

Power Darlington Transistors manufactured by

the epitaxial base process, designed for general

purpose amplifier and low speed switching

applications where high gain is required.

MARKING: FULL PART NUMBER