CMLDM8005

SURFACE MOUNT

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State - Note 1)

ID

650

mA

Continuous Source Current (Body Diode)

IS

250

mA

Maximum Pulsed Drain Current

IDM

1.0

A

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 2)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

10

μA

IDSS

VDS=16V, VGS=0

100

nA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.5

1.0

V

VSD

VGS=0, IS=250mA

1.1

V

rDS(ON)

VGS=4.5V, ID=350mA

0.25

0.36

Ω

rDS(ON)

VGS=2.5V, ID=300mA

0.37

0.5

Ω

rDS(ON)

VGS=1.8V, ID=150mA

0.8

Ω

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM8005

consists of Dual P-Channel Enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer Very

Low rDS(ON) and Low Threshold Voltage.

MARKING CODE: CC8

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

• Complementary Dual N-Channel Device: CMLDM7005

APPLICATIONS:

• Load Switch / Level Shifting

• Battery Charging

• Boost Switch

• Electro-luminescent Backlighting

SOT-563 CASE

R3 (27-September 2011)

www.centr a lsemi.com