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BTS130 датащи(PDF) 3 Page - Siemens Semiconductor Group

номер детали BTS130
подробное описание детали  TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
PDF  9 Pages
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS130 датащи(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
Electrical Characteristics (cont’d)
at
T
j = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
I
S
–
–
27
A
Pulsed source current
I
SM
–
–
108
Diode forward on-voltage
I
F = 54 A, VGS = 0
V
SD
–
1.5
2.0
V
Reverse recovery time
I
F = IS, diF/dt = 100 A/µs, VR = 30 V
t
rr
–
150
–
ns
Reverse recovery charge
I
F = IS, diF/dt = 100 A/µs, VR = 30 V
Q
rr
–
1.0
–
µC
Temperature Sensor
Forward voltage
I
TS(on) = 10 mA, Tj = – 55 ... + 150 ° C
Sensor override,
t
p ≤ 100 µs
T
j = – 55 ... + 160 °C
V
TS(on)
–
–
1.4
–
1.5
10
V
Forward current
T
j = – 55 ... + 150 °C
Sensor override,
t
p ≤ 100 µs
T
j = – 55 ... + 160 °C
I
TS(on)
–
–
–
–
10
600
mA
Holding current,
V
TS(off) = 5 V,
T
j = 25 °C
T
j = 150 °C
I
H
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
V
TS = 5 V
T
TS(on)
150
–
–
°C
Turn-off time
V
TS = 5 V, ITS(on) = 2 mA
t
off
0.5
–
2.5
µs
BTS 130



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