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DTC044TM датащи(PDF) 2 Page - Rohm |
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DTC044TM датащи(HTML) 2 Page - Rohm |
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2 / 3 page ![]() www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet DTC044TM / DTC044TEB / DTC044TUB Electrical characteristics (Ta=25 C) Symbol Max. Unit BVCBO -V BVCEO -V BVEBO -V ICBO 500 nA IEBO 500 nA VCE(sat) 0.15 V hFE 600 - fT - MHz R1 61.1 k * Characteristics of built-in transistor Electrical characteristics curves Parameter Min. Typ. Test Conditions Collector-Base breakdown voltage 50 - IC=50A Collector-Emitter breakdown voltage 50 - IC=1mA Emitter-Base breakdown voltage 5 - IE=50A Collector cut-off current - - VCB=50V Emitter cut-off current - - VEB=4V Collector-Emitter saturation voltage - 0.05 IC=5mA / IB=0.5mA DC current gain 100 - VCE=10V / IC=5mA Transition frequency * - 250 VCE=10V / IE=-5mA f=100MHz Fig.1 DC Current Gain vs. Collector Current Fig.2 Collector Saturation Voltage vs. Collector Current Input resistance 32.9 47 1 10 100 1000 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) VCE=10V Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.001 0.01 0.1 1 0.01 0.1 1 10 COLLECTOR CURRNET : IC (mA) IC/IB=10 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 2/2 2011.08 - Rev.A |
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