TS1002IM8T datasheet(3/13 Pages) TOUCHSTONE

3 / 13 page

TS1002/TS1004

TS1002_4DS r1p0

Page 3

RTFDS

ELECTRICAL CHARACTERISTICS

VDD = +0.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted.

Typical values are at TA = +25°C. See Note 1

Parameters

Symbol

Conditions

Min

Typ

Max

Units

Supply Voltage Range

VDD-VSS

0.65

0.8

2.5

Supply Current

ISY

TS1002; RL = Open circuit

TA = 25

°C

1.2

1.6

µA

-40

°C ≤ TA ≤ 85°C

TS1004; RL = Open circuit

TA = 25

°C

2.4

3.2

µA

-40

°C ≤ TA ≤ 85°C

Input Offset Voltage

VOS

VIN = VSS or VDD

TA = 25

°C

0.5

-40

°C ≤ TA ≤ 85°C

Input Offset Voltage Drift

TCVOS

µV/°C

Input Bias Current

IIN+, IIN-

VIN+, VIN- = (VDD - VSS)/2

TA = 25

°C

0.025

-40

°C ≤ TA ≤ 85°C

Input Offset Current

IOS

Specified as IIN+ - IIN-

VIN+, VIN- = (VDD - VSS)/2

TA = 25

°C

0.01

-40

°C ≤ TA ≤ 85°C

Input Voltage Range

IVR

Guaranteed by Input Offset Voltage Test

VSS

VDD

Common-Mode Rejection Ratio

CMRR

0V ≤ V

IN(CM) ≤ 0.4V

Power Supply Rejection Ratio

PSRR

0.65V ≤ (V

DD - VSS) ≤ 2.5V

Output Voltage High

VOH

Specified as VDD - VOUT,

RL = 100kΩ to VSS

TA = 25

°C

1.2

-40

°C ≤ TA ≤ 85°C

2.5

Specified as VDD - VOUT,

RL = 10kΩ to VSS

TA = 25

°C

-40

°C ≤ TA ≤ 85°C

Output Voltage Low

VOL

Specified as VOUT - VSS,

RL = 100kΩ to VDD

TA = 25

°C

0.4

0.6

-40

°C ≤ TA ≤ 85°C

Specified as VOUT - VSS,

RL = 10kΩ to VDD

TA = 25

°C

-40

°C ≤ TA ≤ 85°C

Short-circuit Current

ISC+

VOUT = VSS

TA = 25

°C

0.5

1.5

-40

°C ≤ TA ≤ 85°C

0.3

ISC-

VOUT = VDD

TA = 25

°C

4.5

-40

°C ≤ TA ≤ 85°C

Open-loop Voltage Gain

AVOL

VSS+50mV ≤ VOUT ≤ VDD-50mV

TA = 25

°C

104

-40

°C ≤ TA ≤ 85°C

Gain-Bandwidth Product

GBWP

RL = 100kΩ to VSS, CL = 20pF

kHz

Phase Margin

Unity-gain Crossover,

RL = 100kΩ to VSS, CL = 20pF

degrees

Slew Rate

RL = 100kΩ to VSS, AVCL = +1V/V

1.5

V/ms

Full-power Bandwidth

FPBW

FPBW = SR/(π • V

OUT,PP); VOUT,PP = 0.7VPP

680

Input Voltage Noise Density

f = 1kHz

0.6

µV/

Input Current Noise Density

f = 1kHz

pA/

Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by

device characterization, not production tested.

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