Parameter

Symbol

Value

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

7.0

V

Collector Current

15

A

Base Current

7

A

Total Dissipation at

90

W

Max. Operating Junction Temperature

150

Storage Temperature

-55~150

TIP3055 / TIP2955

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

—

—

0.7

mA

Emitter Cut-off Current

—

—

5.0

mA

Collector-Emitter Sustaining Voltage

60

—

—

V

DC Current Gain

20

—

70

5

—

—

Collector-Emitter Saturation Voltage

—

—

1.0

V

—

—

3.0

Base-Emitter Voltage

—

—

1.8

V

Transition Frequency

3

—

—

MHz

Complementary Silicon High Power Ttransistors

Product specification

The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in

TO-247 plastic package. It is intented for power switching circuits, series

and shunt regulators, output stages and hi-fi amplifiers.

The complementary PNP type is the TIP2955.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

TO-247

( Ta = 25 C)

O

( Ta = 25 C)

O

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