60CPU02-F datasheet(4/7 Pages) VISHAY

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VS-60CPU02-F, VS-60CPU02-N3

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Vishay Semiconductors

Revision: 26-Jan-12

Document Number: 94657

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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 8 - Typical Stored Charge vs. dIF/dt

Note

(1) Formula used: TC = TJ - (Pd +PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR

Fig. 9 - Reverse Recovery Parameter Test Circuit

Fig. 10 - Reverse Recovery Waveform and Definitions

100

1000

dIF/dt (A/µs)

F = 30 A, TJ = 25 °C

F = 30 A, TJ = 125 °C

100

1000

100

1000

dIF/dt (A/µs)

F = 30 A, TJ = 25 °C

F = 30 A, TJ = 125 °C

IRFP250

D.U.T.

L = 70 μH

R = 200 V

0.01

F/dt

adjust

0.5 I

RRM

(rec)M/dt

0.75 I

RRM

F/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

F/dt - rate of change of current

through zero crossing

(2) I

RRM - peak reverse recovery current

(3) t

rr - reverse recovery time measured

from zero crossing point of negative

going I

F to point where a line passing

through 0.75 I

RRM and 0.50 IRRM

extrapolated to zero current.

(4) Q

rr - area under curve defined by trr

and I

RRM

rr x IRRM

rr =

(5) dI

(rec)M/dt - peak rate of change of

current during t

b portion of trr

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