BSP149 datasheet(2/7 Pages) SIEMENS

номер детали	BSP149

подробное описание детали	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

PDF	7 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

BSP 149

Electrical Characteristics

j = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = − 3 V, ID = 0.25 mA

(BR)DSS

200

–

Gate threshold voltage

DS = 3 V, ID = 1 mA

GS(th)

− 1.8

− 1.2

− 0.7

Drain-source cutoff current

DS = 200 V, VGS = − 3 V

= 25 ˚C

= 125 ˚C

DSS

–

0.2

200

µA

Gate-source leakage current

GS = 20 V, VDS = 0

GSS

–

100

Drain-source on-resistance

GS = 0 V, ID = 0.03 A

DS(on)

–

2.5

3.5

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = 0.48 A

0.4

0.75

–

Input capacitance

GS = 0, VDS = 25 V, f = 1 MHz

iiss

–

500

670

Output capacitance

GS = 0, VDS = 25 V, f = 1 MHz

oss

–40

Reverse transfer capacitance

GS = 0, VDS = 25 V, f = 1 MHz

rss

–12

Turn-on time

on, (ton = td(on) + tr)

DD =30 V, VGS = − 2 ... + 5 V, RGS =50 Ω,

D = 0.29 A

d(on)

–

–20

Turn-off time

off, (toff = td(off) + tf)

DD =30 V, VGS = − 2 ... + 5 V, RGS =50 Ω,

D = 0.29 A

d(off)

–60

–50

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