MBR150 datasheet(2/6 Pages) VISHAY

2 / 6 page

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3

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Vishay Semiconductors

Revision: 20-Sep-11

Document Number: 93439

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Notes

(1)

thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

VFM (1)

1 A

TJ = 25 °C

0.75

2 A

0.9

3 A

1.0

1 A

TJ = 125 °C

0.65

2 A

0.75

3 A

0.82

Maximum reverse leakage current

See fig. 2

IRM (1)

TJ = 25 °C

VR = Rated VR

0.5

TJ = 100 °C

TJ = 125 °C

Typical junction capacitance

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ (1), TStg

- 40 to 150

°C

Maximum thermal resistance,

junction to lead

RthJL (2)

DC operation

See fig. 4

°C/W

Approximate weight

0.33

0.012

oz.

Marking device

Case style DO-204AL (DO-41)

MBR150

MBR160

tot

-------------

thJA

--------------

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