61CTQ035PBF_12 datasheet(2/7 Pages) VISHAY

2 / 7 page

VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series

www.vishay.com

Vishay Semiconductors

Revision: 29-Aug-11

Document Number: 94241

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Maximum forward voltage drop

VFM (1)

30 A

TJ = 25 °C

0.57

0.61

60 A

0.72

0.76

30 A

TJ = 125 °C

0.53

0.57

60 A

0.70

0.74

Maximum instantaneous reverse current

IRM

TJ = 25 °C

Rated DC voltage

0.06

TJ = 125 °C

Maximum junction capacitance

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

1900

Typical series inductance

Measured from top of terminal to mounting plane

8.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 65 to 175

°C

Maximum thermal resistance,

junction to case per leg

RthJC

DC operation

1.2

°C/W

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.50

Approximate weight

0.07

oz.

Mounting torque

minimum

Non-lubricated threads

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AB

61CTQ035

61CTQ040

61CTQ045

61CTQ035PBF датащи(PDF) 2 Page - Vishay Siliconix

61CTQ035PBF датащи(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL