BC558 datasheet(1/1 Pages) TGS

номер детали	BC558

подробное описание детали	TO-92 Plastic-Encapsulate Transistors

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производитель	TGS [Tiger Electronic Co.,Ltd]

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TO-92 Plastic-Encapsulate Transistors

BC556/BC557/BC558

TRANSISTOR (PNP)

FEATURES

High Voltage

Complement to BC546/BC547/BC548

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

BC556

BC557

BC558

-80

-50

-30

V

VCEO

Collector-Emitter Voltage

-65

-45

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-100

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

BC556

BC557

BC558

VCBO

IC= -100μA, IE=0

-80

-50

-30

V

Collector-emitter breakdown voltage

BC556

BC557

BC558

VCEO

IC= -2mA , IB=0

-65

-45

-30

V

Emitter-base breakdown voltage

VEBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

BC556

BC557

BC558

ICBO

VCB=- 70 V, IE=0

VCB= -45 V, IE=0

VCB= -25V, IE=0

-0.1

μA

Collector cut-off current

BC556

BC557

BC558

ICEO

VCE= -60 V, IB=0

VCE= -40 V, IB=0

VCE= -25 V, IB=0

-0.1

μA

Emitter cut-off current

BC556

BC557

BC558

IEBO

VEB= -5 V, IC=0

-0.1

μA

DC current gain

BC556

BC557

BC558

BC557A

BC556B/BC557B/BC558B

BC557C

hFE

VCE=-5V, IC= -2mA

120

180

420

800

220

460

800

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB= -5mA

-0.65

V

Base-emitter saturation voltage

VBE(sat)

IC= -100mA, IB=-5mA

-1

V

Transition frequency

f T

VCE= -5V, IC= -10mA

f = 100MHz

150

MHz

TO-92

1. COLLECTOR

2. BASE

3. EMITTER

A,May,2011

TIGER ELECTRONIC CO.,LTD

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