2SC1959

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The 2SC1959 is designed for audio frequency Low power amplifier

applications.

Features

• Excellent hFE Linearity.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................... -55~+150

°C

Junction Temperature ....................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 500 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 35 V

VCEO Collector to Emitter Voltage ...................................................................................... 30 V

VEBO Emitter to Base Voltage ........................................................................................... 5.0 V

IC Collector Current ....................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

35

-

-

V

IC=100uA, IE=0

BVCEO

30

-

-

V

IC=1mA, IB=0

BVEB

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

100

nA

VCB=35V, IE=0

IEBO

-

-

100

nA

VEB=5V, IC=0

VCE(sat)

-

-

0.25

V

IC=100mA, IB=10mA

VBE(on)

-

-

1.0

V

VCE=1V, IC=100mA

hFE1

120

-

240

VCE=1V, IC=100mA

hFE2

40

-

-

VCE=6V, IC=400mA

fT

-

300

-

MHz

IC=20mA, VCE=6V

Cob

-

7.0

-

pF

IE=0, VCB=6V, f=1MHZ

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD