MCL4151 datasheet(2/4 Pages) VISHAY

2 / 4 page

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Document Number 85567

Rev. 1.9, 20-Aug-10

MCL4151

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

Mounted on epoxy-glass hard

tissue, fig. 4,

35 µm copper clad, 0.9 mm2

copper area per electrode

RthJA

500

K/W

Junction temperature

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 50 mA

880

1000

Reverse voltage

VR = 50 V

VR = 50 V, Tj = 150 °C

µA

Breakdown voltage

IR = 5 µA, tp/T = 0.01, tp = 0.3 ms

V(BR)

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

2pF

Reverse recovery time

IF = IR = 10 mA, iR = 1 mA

trr

4ns

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100 Ω

trr

2ns

Figure 1. Reverse Current vs. Junction Temperature

040

120

160

0.01

0.1

100

Tj -Junction Temperature (°C)

200

94 9151

VR =50 V

Scattering Limit

Figure 2. Forward Current vs. Forward Voltage

00.4

0.8

1.2

1.6

0.1

100

1000

V - Forward Voltage (V)

2.0

94 9152

T = 25 °C

T = 100 °C

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