STT3962NE datasheet(2/2 Pages) SECOS

номер детали	STT3962NE

подробное описание детали	2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

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Any changes of specification will not be informed individually.

STT3962NE

2.3A , 60V , RDS(ON) 0.153 Ω

Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

4-Aug-2011 Rev. A

Page 2 of 2

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

Gate-Body Leakage Current

IGSS

100

VDS=0, VGS=20V

Zero Gate Voltage Drain Current

IDSS

VDS=48V, VGS=0

VDS=48V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS =5V, VGS=10V

Drain-Source On-Resistance

RDS(ON)

0.153

VGS=10V, ID=2.3A

0.185

VGS=4.5V, ID=2.1A

Forward Transconductance

gfs

VDS=5V, ID=2.3A

Diode Forward Voltage

VSD

0.8

IS=1.05A, VGS=0

Dynamic

Total Gate Charge

VDS=15V,

VGS=4.5V,

ID=2.3A

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

VDD=15V,

VGS=4.5V,

RGEN=15 ,

ID=1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes:

Pulse test: PW ≦ 300us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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