KTA2014 datasheet(1/3 Pages) SECOS

номер детали	KTA2014

подробное описание детали	-0.15A , -50V PNP Plastic Encapsulated Transistor

PDF	3 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 3 page

KTA2014

-0.15A , -50V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

15-Jul-2011 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low frequency power amplifier application

Power switching application

CLASSIFICATION OF hFE

Product-Rank

KTA2014-O

KTA2014-Y

KTA2014-GR

Range

70~140

120~240

200~400

Marking Code

SO

SY

SG

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-323

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-50

V

Collector to Emitter Voltage

VCEO

-50

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current - Continuous

IC

-150

mA

Collector Power Dissipation

PC

100

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

-50

-

V

IC= -100µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

-50

-

V

IC= -1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

-5

-

V

IE= -100µA, IC=0

Collector Cut-Off Current

ICBO

-

-0.1

µA

VCB= -50V, IE=0

Emitter Cut-Off Current

IEBO

-

-0.1

µA

VEB= -5V, IC=0

DC Current Gain

hFE

70

-

400

VCE= -6V, IC= -2mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

-0.3

V

IC= -100mA, IB=-10mA

Transition Frequency

fT

80

-

MHz

VCE= -10V, IC= -1mA

Collector output capacitance

Cob

-

7

pF

VCB= -10V, IE=0, f=1MHz

Noise Figure

NF

-

10

dB

VCE= -6V, IC= -0.1mA

f=1KHz, Rg=10K

SOT-323

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

-

E

1.20

1.40

L

0.650 TYP.

F

0.20

0.40

Аналогичный номер детали - KTA2014

производитель	номер детали	датащи	подробное описание детали
KEC(Korea Electronics)	KTA2014	279Kb / 3P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
Shenzhen Jin Yu Semicon...	KTA2014	692Kb / 3P	TRANSISTOR (PNP)
Galaxy Semi-Conductor H...	KTA2014	202Kb / 4P	PNP Silicon Epitaxial Planar Transistor
Jiangsu Changjiang Elec...	KTA2014	533Kb / 3P	SOT-323 Plastic-Encapsulate Transistors
Guangdong Kexin Industr...	KTA2014	1Mb / 3P	PNP Transistors

More results

Аналогичное описание - KTA2014

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	2SA733	284Kb / 2P	PNP Plastic Encapsulated Transistor
	2N4402	109Kb / 1P	PNP Plastic Encapsulated Transistor
	2SA733	420Kb / 2P	PNP Plastic Encapsulated Transistor
	2SA844	83Kb / 1P	PNP Plastic Encapsulated Transistor
	2SA1300	401Kb / 2P	PNP Plastic Encapsulated Transistor
	2SB1068	84Kb / 1P	PNP Plastic Encapsulated Transistor
	2SC4738	277Kb / 2P	0.15A , 60V NPN Plastic Encapsulated Transistor
	KTA1504	58Kb / 1P	-0.15A , -50V PNP Plastic Encapsulated Transistor
	KTC3875	595Kb / 3P	0.15A , 60V NPN Plastic Encapsulated Transistor
	SCS16DSTL	187Kb / 2P	0.15A , 75V Plastic-Encapsulated Switching Diode

More results

KTA2014 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

KTA2014 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - KTA2014

Аналогичное описание - KTA2014

Html Pages

1 2 3

датащи скачать

ссылки URL