BGA310 datasheet(1/4 Pages) SIEMENS

номер детали	BGA310

подробное описание детали	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)

PDF	4 Pages

Scroll/Zoom	100%

производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

Logo

1 / 4 page

BGA 310

Semiconductor Group

Sep-04-1998

1

Silicon Bipolar MMIC-Amplifier

Preliminary data

• Cascadable 50 Ω-gain block

• 9 dB typical gain at 1.0 GHz

• 9 dBm typical P

-1dB at 1.0 GHz

• 3 dB-bandwidth: DC to 2.4 GHz

VPS05178

2

1

3

4

EHA07312

3

1

2, 4

RF IN

RF OUT/Bias

GND

Circuit Diagram

Type

Marking Ordering Code

Pin Configuration

Package

BGA 310 BLs

Q62702-G0041

1 RFout/bias 2 GND 3 RF input

4 GND SOT-143

Maximum Ratings

Parameter

Value

Symbol

Unit

Device current

ID

mA

60

Total power dissipation,

TS ≤ 99 °C

250

Ptot

mW

RF input power

dBm

10

PRFin

Tj

Junction temperature

150

°C

Ambient temperature

TA

-65 ...+150

Storage temperature

Tstg

-65 ...+150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 205

K/W

1)

TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group

1

1998-11-01

Аналогичный номер детали - BGA310

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BGA312	20Kb / 4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
NXP Semiconductors	BGA3131	544Kb / 26P	DOCSIS 3.1 upstream amplifier Rev. 1-13 May 2016
Siemens Semiconductor G...	BGA318	20Kb / 4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)

More results

Аналогичное описание - BGA310

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BGA312	20Kb / 4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
Siemens Semiconductor G...	BGA318	20Kb / 4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
Hittite Microwave Corpo...	HMC580ST89	272Kb / 6P	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
AVAGO TECHNOLOGIES LIMI...	MSA-0836	376Kb / 4P	Cascadable Silicon Bipolar MMIC Amplifier Usable Gain to 6.0 GHz
Pasternack Enterprises,...	PE15A1010	406Kb / 3P	40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
Cree, Inc	CGHV60075D5	662Kb / 7P	19 dB Typical Small Signal Gain at 4 GHz Rev 1.1
Analog Devices	HMC787A	956Kb / 18P	Conversion loss: 9 dB typical at 3 GHz to 9 GHz REV. 0
Analog Devices	HMC558A	367Kb / 15P	Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz REV. 0
CRYSTEK CORPORATION	CBTEE-01-50-6000	235Kb / 4P	High Isolation, 35 dB Typical at 1 GHz
Pasternack Enterprises,...	PE1528	349Kb / 3P	11 dBm P1dB, 10 MHz to 3 GHz, Gain Block Amplifier, 15 dB Gain, 12 dBm IP3, 3 dB NF, SMA

More results

BGA310 датащи(PDF) 1 Page - Siemens Semiconductor Group

BGA310 датащи(HTML) 1 Page - Siemens Semiconductor Group

Аналогичный номер детали - BGA310

Аналогичное описание - BGA310

Html Pages

1 2 3 4

датащи скачать

ссылки URL