BFS17P datasheet(3/5 Pages) SIEMENS

номер детали	BFS17P

подробное описание детали	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

PDF	5 Pages

Scroll/Zoom	100%

производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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3 / 5 page

Semiconductor Group

Aug-02-1996

BFS 17P

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics of any single Transistor

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

1.3

2.5

1.4

GHz

Collector-base capacitance

VCB = 5 V, VBE = vbe = 0 , f = 1 MHz

Ccb

0.55

0.8

Collector-emitter capacitance

VCE = 5 V, VBE = vbe = 0 , f = 1 MHz

Cce

0.25

Input capacitance

VEB = 0.5 V, IC = 0 , f = 1 MHz

Cibo

1.45

Output capacitance

VCE = 5 V, VBE = vbe = 0 , f = 1 MHz

Cobs

1.5

Noise figure

IC = 2 mA, VCE = 5 V, f = 800 MHz

ZS = 0 Ω

3.5

Transducer gain

IC = 20 mA, VCE = 5 V, f = 500 MHz

ZS =ZL= 50 Ω

S21e|2

12.7

Linear output voltage

IC = 14 mA, VCE = 5 V, dim = 60 dB

f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω

V01=V02

100

Third order intercept point

IC = 14 mA, VCE = 5 V, f = 800 MHz

ZS = ZSopt, ZL = ZLopt

IP3

dBm

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