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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FMMT593 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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FMMT593 датащи(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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1 / 1 page  FEATURES Complementary Type FMMT493 MARKING:593 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-100V, IE=0 -0.1 µA Collector cut-off current ICES VCES=-100V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) * VCE=-5V, IC=-1mA 100 hFE(2) * VCE=-5V, IC=-250mA 100 hFE(3) * VCE=-5V, IC=-0.5A 100 300 DC current gain hFE(4) * VCE=-5V, IC=-1A 50 VCE(sat)1* IC=-250mA, IB=-25mA -0.2 V Collector-emitter saturation voltage VCE(sat)2* IC=-500mA, IB=-50mA -0.3 V Base-emitter saturation voltage VBE(sat)* IC=-500mA, IB=-50mA -1.1 V Base-emitter voltage VBE* VCE=-5V, IC=-1mA -1 V Transition frequency fT VCE=-10V,IC=-50mA, f=100MHz 50 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 5 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. SOT–23 1. BASE 2. EMITTER 3. COLLECTOR FMMT593 TRANSISTOR (PNP) １ Ｄａｔｅ：２０１１／０５ www.htsemi.com semiconductor JinYu |
Аналогичный номер детали - FMMT593 |
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Аналогичное описание - FMMT593 |
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ссылки URL |
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