BAS70 datasheet(1/2 Pages) HTSEMI

номер детали	BAS70

подробное описание детали	SWITCHING DIODE

PDF	2 Pages

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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SWITCHING DIODE

FEATURES

Low Turn-on voltage

Fast switching

Also available in lead free version

BAS70 Marking: 73

BAS70-04 Marking: 74

BAS70-05 Marking: 75

BAS70-06 Marking: 76

MAXIMUM RATINGS @TA=25

℃

Symbol

Parameter

Value

Units

VR

DC Voltage

70

V

IF

Forward Continuous Current

70

mA

PD

Power dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR) R

IR= 10µA

70

V

Reverse voltage

leakage current

IR

VR=50V

120

nA

Forward

voltage

VF

IF=1mA

IF=15mA

410

1000

mV

Diode

capacitance

CD

VR=0V

f=1MHz

2

pF

Reveres recovery time

trr

IF=IR=10mA,Irr=0.1xIR,

RL=100Ω

5

nS

SOT-23

BAS7 0/-04/-05/-06

１　

Ｄａｔｅ：２０１１／０５

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BAS70 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

BAS70 датащи(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

Аналогичный номер детали - BAS70

Аналогичное описание - BAS70

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