BAS40V datasheet(1/2 Pages) HTSEMI

номер детали	BAS40V

подробное описание детали	SCHOTTKY DIODE

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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BAS40V

SCHOTTK Y DIODE

FEATURES

Low Forward Voltage Drop

Fast Switching

Marking: KAN

Maximum Ratings @TA=25

℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

DC Blocking Voltage

VRM

VR

40

V

Average Rectified Output Current

IO

200

mA

Power Dissipation

Pd

150

mW

Thermal

Resistance.

Junction

to

Ambient Air

RθJA

833

℃/W

Junction temperature

TJ

-55-125

℃

Storage temperature range

TSTG

-65-150

℃

ELECTRICAL

CHARACTERISTICS (Tamb=25℃

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR)

IR= 10μA

40

V

Reverse voltage

leakage current

IR

VR=30V

200

nA

Forward

voltage

VF

IF=1mA

IF=40mA

380

1000

mV

Total

capacitance

CT

VR=0,f=1MHz

5

pF

Reverse recovery time

t r r

IF=10mA, IR=IF=1mA

RL=100Ω

5

nS

1

SOT-563

www.htsemi.com

semiconductor

JinYu

1

Date:2011/ 05

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