BAS40 datasheet(1/2 Pages) HTSEMI

номер детали	BAS40

подробное описание детали	SCHOTTKY DIODE

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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SCHOTTKY DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40 MARKING: 43•

BAS40-06 MARKING: 46

BAS40-05 MARKING：45

BAS40-04 MARKING：44

Maximum Ratings @TA=25

℃

Parameter

Symbol

Limits

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC Blocking Voltage

VRRM

VRWM

VR

40

V

Forward continuous Current

IFM

200

mA

Power Dissipation

PD

200

mW

Thermal Resistance. Junction to Ambient Air

RθJA

625

℃/W

Junction temperature

TJ

125

℃

Storage temperature range

TSTG

-65-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR)

IR= 10μA

40

V

Reverse voltage leakage current

IR

VR=30V

200

nA

Forward

voltage

VF

IF=1mA

IF=40mA

380

1000

mV

Diode capacitance

CD

VR=0,f=1MHz

5

pF

Reverse Recovery time

t r r

Irr=1mA, IR=IF=10mA

RL=100Ω

5

nS

SOT-23

BAS40/-04/-05/-06

１　

Ｄａｔｅ：２０１１／０５

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