2SC4375 datasheet(1/1 Pages) HTSEMI

номер детали	2SC4375

подробное описание детали	TRANSISTOR (NPN)

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

TRANSISTOR (NPN)

FEATURES

Small Flat Package

Low Collector- Emitter Saturation Voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

µA

DC current gain

hFE

VCE=2V, IC=500mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A,IB=30mA

2

V

Base-emitter voltage

VBE

VCE=2V, IC=500mA

1

V

Transition frequency

fT

VCE=2V,IC=500mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

40

pF

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

100–200

160–320

MARKING

GO

GY

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

1.5

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

2SC4375

１　

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Аналогичный номер детали - 2SC4375

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