2SC4097 datasheet(1/1 Pages) HTSEMI

номер детали	2SC4097

подробное описание детали	TRANSISTOR (NPN)

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TRANSISTOR (NPN)

FEATURES

High ICMax. ICMax=0.5A

Low VCE(sat).Optimal for low voltage operation.

Complements the 2SA1577

MAXIMUM RATINGS (TA=25

℃unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

32

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=20V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

1

μA

DC current gain

hFE

VCE=3V,IC=10mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=

500mA, IB=50mA

0.4

V

Transition frequency

fT

VCE=5V, IC=20mA,f =100MHz

250

MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0,f=1MHZ

6

pF

CLASSIFICATION OF

hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

MARKING

CP

CQ

CR

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

1

2

3

2SC4097

１　

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