2SC3437 datasheet(1/1 Pages) HTSEMI

номер детали	2SC3437

подробное описание детали	TRANSISTOR (NPN)

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TRANSISTOR (NPN)

FEATURES

 High Transition Frequency

 Low Saturation Voltage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

15

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

200

mA

PC

Collector Power Dissipation

150

mW

RΘJA

Thermal Resistance From Junction To Ambient

833

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

15

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

hFE(1)

VCE=1V, IC=10mA

40

240

DC current gain

hFE(2)

VCE=1V, IC=100mA

20

Collector-emitter saturation voltage

VCE(sat)

IC=20mA, IB=1mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=20mA, IB=1mA

1

V

Transition frequency

fT

VCE=10V,IC=10mA

200

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

6

pF

CLASSIFICATION OF hFE(1)

RANK

R

O

Y

RANGE

40–80

70–140

120–240

MARKING

CHR

CHO

CHY

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

2SC3437

１　

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Аналогичный номер детали - 2SC3437

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