2SC2883 datasheet(1/3 Pages) HTSEMI

номер детали	2SC2883

подробное описание детали	TRANSISTOR(NPN)

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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TRANSISTOR (NPN)

FEATURES

Low voltage

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1.5

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A,IB=30mA

2

V

Base-emitter voltage

VBE

VCE=2V,IC=0.5A

1

V

Transition frequency

fT

VCE=2V,IC=500mA

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

40

pF

CLASSIFICATION OF

hFE

Rank

O

Y

Range

100-200

160-320

Marking

GO

GY

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

2SC2883

１　

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2SC2883 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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Аналогичный номер детали - 2SC2883

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