2SC2859 datasheet(1/1 Pages) HTSEMI

номер детали	2SC2859

подробное описание детали	TRANSISTOR (NPN)

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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TRANSISTOR (NPN)

FEATURES

 Excellent hFE Linearity

 Switching Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

150

mW

RΘJA

Thermal Resistance From Junction To Ambient

833

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=35V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

hFE(1)

VCE=1V, IC=100mA

70

400

DC current gain

hFE(2)

VCE=6V, IC=400mA

25

70

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.25

V

Base-emitter voltage

VBE

VCE=1V,IC=100mA,

1

V

Transition frequency

fT

VCE=6V,IC=20mA

300

MHz

Collector output capacitance

Cob

VCB=6V, IE=0, f=1MHz

7

pF

CLASSIFICATION OF hFE(1), hFE(2)

RANK

O

Y

GR(G)

RANGE

hFE(1)

70–140

120–240

200–400

RANGE

hFE(2)

25Min

40Min

70Min

MARKING

WO

WY

WG

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

１　

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SC2859

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