2SC2714 datasheet(1/3 Pages) HTSEMI

номер детали	2SC2714

подробное описание детали	TRANSISTOR(NPN)

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TRANSISTOR (NPN)

FEATURES

Small reverse Transfer Capacitance:Cre=0.7pF(typ.)

Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)

MAXIMUM RATINGS (

TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current -Continuous

20

mA

PC

Collector Power Dissipation

100

mW

Tj

Junction Temperature

125

℃

Tstg

Storage Temperature

-55-+125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=18V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE

VCE=6V,IC=1mA

40

200

Transition frequency

fT

VCE=6V,IC=1mA

550

MHz

Reverse Transfer capacitance

Cre

VCB=6V,IE=0,f=1MHz

0.7

pF

Noise figure

NF

VCE=6V,Ic=1mA,f=100MHZ

2.5

5

dB

CLASSIFICATION OF

hFE

Rank

R

O

Y

Range

40-80

70-140

100-200

Marking

QR

QO

QY

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

１　

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2SC2714

Аналогичный номер детали - 2SC2714

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