2SC2712 datasheet(1/3 Pages) HTSEMI

номер детали	2SC2712

подробное описание детали	TRANSISTOR(NPN)

PDF	3 Pages

Scroll/Zoom	100%

производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

домашняя страница	http://www.htsemi.com

Logo

1 / 3 page

TRANSISTOR (NPN)

FEATURE

· Low Noise: NF=1 dB (Typ),10dB(MAX)

· Complementary to 2SA1162

MAXIMUM RATINGS (

TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA , IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 60 V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

μA

DC current gain

hFE

VCE=6V, IC=2mA

70

700

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB=10mA

0.1

0.25

V

Transition frequency

fT

VCE=10V, IC= 1mA

80

MHz

Output capacitance

Cob

VCB=10V, IE=0,f=1 MHz

2.0

3.5

pF

Noise Figure

NF

VCE=6V,IC=0.1mA,f=1kHz,

Rg=10kΩ

1.0

10

dB

CLASSIFICATION OF hFE

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

Marking

LO

LY

LG

LL

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

2SC2712

１　

www.htsemi.com

semiconductor

JinYu

Аналогичный номер детали - 2SC2712

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC2712	210Kb / 3P	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)
Weitron Technology	2SC2712	338Kb / 5P	Silicon NPN Transistors
Unisonic Technologies	2SC2712	113Kb / 4P	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
Toshiba Semiconductor	2SC2712	624Kb / 5P	Silicon NPN Epitaxial Type (PCT process)
Galaxy Semi-Conductor H...	2SC2712	173Kb / 4P	Silicon Epitaxial Planar Transistor Rev.A

More results

Аналогичное описание - 2SC2712

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	DTC114T	194Kb / 3P	NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR
Shenzhen Jin Yu Semicon...	2SC4944	850Kb / 1P	DUAL TRANSISTOR (NPN NPN)
Jiangsu Changjiang Elec...	BC847BV	3Mb / 3P	DUAL TRANSISTOR(NPN NPN)
	EMX18	776Kb / 3P	DUAL TRANSISTOR(NPNNPN)
	EMX1	3Mb / 4P	DUAL TRANSISTOR(NPNNPN)
	IMX2	5Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	MMDT3904	1Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	UMX2N	1Mb / 3P	DUAL TRANSISTOR (NPNNPN)
	UMX3N	3Mb / 4P	DUAL TRANSISTOR (NPNNPN)
Rectron Semiconductor	MMDT3904	263Kb / 5P	DUAL TRANSISTOR (NPNNPN)

More results

2SC2712 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

2SC2712 датащи(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

Аналогичный номер детали - 2SC2712

Аналогичное описание - 2SC2712

Html Pages

1 2 3

датащи скачать

ссылки URL