BFN21 datasheet(2/4 Pages) SIEMENS

номер детали	BFN21

подробное описание детали	PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

PDF	4 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

BFN 21

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Collector-emitter breakdown voltage

IC = 10

µA, RBE = 2.7 k

Ω

Collector cutoff current

VCE = 300 V, RBE = 2.7 k

Ω

VCE = 300 V, TA = 150 ˚C, RBE = 2.7 k

Ω

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

V(BR)CE0

300

–

Collector-base breakdown voltage

IC = 10

µA

V(BR)CB0

300

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

µA

Collector-base cutoff current

VCB = 250 V

VCB = 250 V, TA = 150 ˚C

ICB0

–

100

µA

ICER

–

DC current gain1)

IC = 25 mA, VCE = 20 V

hFE

–

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

VCEsat

–

0.5

Base-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

VBEsat

––1

Emitter-base cutoff current

VEB = 5 V

IEB0

––10

V(BR)CER

300

–

MHz

Transition frequency

IC = 10 mA, VCE = 10 V, f = 20 MHz

–

100

–

Output capacitance

VCB = 30 V, f = 1 MHz

Cobo

–

0.8

–

AC characteristics

Pulse test conditions:

≤ 300 µs, D = 2 %.

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