BF987 datasheet(2/5 Pages) SIEMENS

номер детали	BF987

подробное описание детали	SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability)

PDF	5 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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2 / 5 page

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

AC Characteristics

Drain-source breakdown voltage

ID = 10

µA, – VGS = 4 V

V(BR) DS

–

Gate-source leakage current

± VGS = 5 V, VDS = 0

± IGSS

––50

Gate-source breakdown voltage

± IGS = 10 mA, VDS = 0

± V(BR) GSS

6.5

–

Gate-source pinch-off voltage

VDS = 10 V, ID = 20

µA

– VGS (p)

–

2.5

Drain current

VDS = 10 V, VGS = 0

IDSS

5–18

Forward transconductance

VDS = 10 V, ID = 10 mA, f = 1 kHz

gfs

–

Output capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cdss

–1–

Noise figure (test circuit)

VDS = 10 V, ID = 10 mA , f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

–1–

Gate input capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cgss

–

2.7

–

Reverse transfer capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cdg

–35

–

Power gain (test circuit)

VDS = 10 V, ID = 10 mA , f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

–25

–

BF 987

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