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EPC120 датащи(PDF) 2 Page - Espros Photonics corp |
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EPC120 датащи(HTML) 2 Page - Espros Photonics corp |
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2 / 27 page ![]() epc120 Absolute Maximum Ratings (Notes 1, 2) Recommended Operating Conditions Voltage to any pin except VDD Supply Voltage on 2-wire bus VDD Programming Voltage on 2-wire bus VDD Input current at any pin except LED Power consumption with maximum load Storage Temperature Range (TS) Lead Temperature solder, 4 sec. (TL) -0.3V to VDD+0.3 V -0.3V to +8.0V -0.3V to +8.0V -6mA to +6 mA 125mW -55°C to +155°C +260°C Operating Voltage on 2-wire bus VDD Programming Voltage on VDD Operating Temperature (TO) Relative Humidity (non-condensing) Min. 4.5 7.0 -40° +5 Max. 5.5 8.0 +85 +95 Units V V °C % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific - ations and test conditions, see Electrical Characteristics. Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and assembly of this device should only be done at ESD protected workstations. Electrical Characteristics VDD = 4.5V … 5.5V, -40°C < TA < +85°C, unless otherwise specified General Data Symbol Parameter Conditions/Comments Values Units Min. Typ. Max. VPP Ripple on supply voltage, peak to peak 2-wire interface Vdet Input pulse IPD NST 50mV 48nA 150 mV 100mV 72nA 350 mV 200mV 108nA 600 mV IDD_OP Current consumption in operation mode IPD = 0 mA 2 mA Vdet Detection level for 2-wire interface configurable 50 200 mV IMOD Modulation current for 2-wire inter- face 6.4 9.8 mA fclk Reference clock Internal oscillator 1 MHz dfclk Temperature drift of the oscillator 640 ppm/K VPUP Power-up Threshold Voltage The voltage at VDD33 when the device starts up 2.4 3 V VIH INPUT Logical high (VN can be either VDD or VDD33) 0.7 *VN VN V VIL INPUT Logical low (VN can be either VDD or VDD33) GND 0.3 *VN V ILEAKD Input leakage current 10 µA VOH Output high voltage @ 4mA sink except pin SCK/LED VDD- 0.5 V VOL Output low voltage @ 4mA source 0.5 V ISCK/LED Source current @ PIN SCK / LED 0.7 1.3 mA VHist Schmitt Trigger Hysteresis 0.1 V RPU Pull-Up Resistor 30 200 kΩ IPDDC DC Photo Diode Current generated by ambient light with no effect to the sensitivity 0.0 2 mA CPD Photodiode Capacitance Photodiode Capacitance 40 pF IN_Imin Input related noise @ IPDDC =0 15 nA RMS IN_Imax Input related noise @ IPDDC =IPDDCMax 20 nA RMS IPDN Photo Current Sensitivity, normal threshold Parameter SENSN = 011 (60nA). TPulse = 6µs Photodiode pulse to generate a status “pulse detected” 45 60 75 nA IPDH Photo Current Sensitivity, upper threshold Parameter SENSH = 011 (96nA). TPulse = 6µs Photodiode pulse to generate a status “pulse detected” 1.4 1.6 1.8 IPDN © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 2 Datasheet epc12x - V2.1 www.espros.ch |
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