BDP950 datasheet(2/4 Pages) SIEMENS

номер детали	BDP950

подробное описание детали	PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)

PDF	4 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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2 / 4 page

Semiconductor Group

Nov-28-1996

BDP 948

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 mA, BDP 948

IC = 10 mA, IB = 0 mA, BDP 950

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IB = 0 , BDP 948

IC = 100 µA, IB = 0 , BDP 950

V(BR)CBO

Base-emitter breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 45 V, IE = 0 , TA = 25 °C

VCB = 45 V, IE = 0 , TA = 150 °C

ICBO

100

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 1 A, VCE = 2 V

hFE

475

Collector-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

VCEsat

0.5

Base-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

VBEsat

1.3

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t < 300

µs; D < 2%

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