BLF879P datasheet(3/15 Pages) PHILIPS

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BLF879P

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Product data sheet

Rev. 1 — 23 August 2011

3 of 15

NXP Semiconductors

BLF879P

UHF power LDMOS transistor

Characteristics

[1]

ID is the drain current.

[2]

Capacitance values without internal matching.

Table 6.

DC characteristics

Tj =25 C; per section unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0 V; ID = 2.4 mA

[1] 104 -

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 240 mA [1] 1.4

1.9

2.4

IDSS

drain leakage current

VGS =0 V; VDS =42V

2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

-38

IGSS

gate leakage current

VGS =10 V; VDS = 0 V

280

RDS(on)

drain-source on-state resistance

VGS =VGS(th) +3.75 V;

ID =8.5 A

[1] -

120



Ciss

input capacitance

VGS = 0 V; VDS =42V;

f= 1MHz

[2] -

210

Coss

output capacitance

VGS = 0 V; VDS =42V;

f= 1MHz

-72

Crss

reverse transfer capacitance

VGS = 0 V; VDS =42V;

f= 1MHz

-1.5

Table 7.

RF characteristics

RF characteristics in NXP production narrowband test circuit; Tcase =25 C unless otherwise

specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

2-Tone, class-AB

VDS

drain-source voltage

IDq

quiescent drain current

[1] -1.3

PL(AV)

average output power

f1 = 860 MHz;

f2 =860.1 MHz

200

power gain

f1 = 860 MHz;

f2 =860.1 MHz



drain efficiency

f1 = 860 MHz;

f2 =860.1 MHz

IMD3

third-order intermodulation distortion

f1 = 860 MHz;

f2 =860.1 MHz

33 29

dBc

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