BLF642

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 2 — 22 July 2011

2 of 12

NXP Semiconductors

BLF642

Broadband power LDMOS transistor

1.3 Applications

2.

Pinning information

[1]

Connected to flange

3.

Ordering information

4.

Limiting values

5.

Thermal characteristics

[1]

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain

2gate

3source

[1]

1

2

3

sym112

1

3

2

Table 3.

Ordering information

Type number Package

Name Description

Version

BLF642

-

flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+11

V

storage temperature

65

+150

C

junction temperature

-

200

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1] 1.6

K/W