VB30200C datasheet(1/5 Pages) VISHAY

номер детали	VB30200C

подробное описание детали	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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производитель	VISHAY [Vishay Siliconix]

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V30200C, VF30200C, VB30200C & VI30200C

Vishay General Semiconductor

Document Number: 89014

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

New Product

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.526 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

2 x 15 A

VRRM

200 V

IFSM

250 A

VF at IF = 15 A

0.648 V

TJ max.

150 °C

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

V30200C

VF30200C

VI30200C

VB30200C

TMBS

®

ITO-220AB

1

2

3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30200C

VF30200C VB30200C

VI30200C

UNIT

Maximum repetitive peak reverse voltage

VRRM

200

V

Maximum average forward rectified current

(fig. 1)

per device

per diode

IF(AV)

30

15

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

250

A

Non-repetitive avalanche energy

at TJ = 25 °C, L = 60 mH per diode

EAS

200

mJ

Peak repetitive reverse current at tp = 2 µs, 1 kHz,

TJ = 38 °C ± 2 °C per diode

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Isolation voltage (ITO-220AB only)

from termal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

- 40 to + 150

°C

Аналогичный номер детали - VB30200C

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	VB30200C	158Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	VB30200C	157Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 17-Aug-15
	VB30200C	155Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 17-Aug-15
	VB30200C	216Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 19-Jun-2018
Inchange Semiconductor ...	VB30200C	314Kb / 2P	Schotty Barrier Diode

More results

Аналогичное описание - VB30200C

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	V40100C	140Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 23-Mar-11
	V40100G	131Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 23-Mar-11
	V40150C	162Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	V50100PW	84Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Feb-10
	VF30120C	78Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 10-Nov-10
	VF40150C	79Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 10-Nov-10
	VT3060C	131Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 23-Mar-11
	V30100PW-M3	77Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 09-Feb-10

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