BC817-16W datasheet(2/5 Pages) SIEMENS

номер детали	BC817-16W

подробное описание детали	NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

PDF	5 Pages

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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Semiconductor Group

Dec-19-1996

BC 817-16W

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC 817 W

IC = 10 mA, IB = 0 , BC 818 W

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IB = 0 , BC 817 W

IC = 10 µA, IB = 0 , BC 818 W

V(BR)CBO

Base-emitter breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 25 V, TA = 25 °C

VCB = 25 V, TA = 150 °C

ICBO

100

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain

IC = 100 mA, VCE = 1 V, BC ... 16 W

IC = 100 mA, VCE = 1 V, BC ... 25 W

IC = 100 mA, VCE = 1 V, BC ... 40 W

IC = 300 mA, VCE = 1 V, BC ... 16 W

IC = 300 mA, VCE = 1 V, BC ... 25 W

IC = 300 mA, VCE = 1 V, BC ... 40 W

hFE

170

100

250

160

100

350

250

160

630

400

250

Collector-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VCEsat

0.7

Base-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VBEsat

1.2

1) Pulse test: t < 300

µs; D < 2%

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