www.vishay.com

Document Number: 81021

2

Rev. 1.8, 25-Jun-09

TSHA6200, TSHA6201, TSHA6202, TSHA6203

Vishay Semiconductors

Infrared Emitting Diode, 875 nm,

GaAlAs

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

Note

0

20

40

60

80

100

120

140

160

180

200

010

20

30

40

50

60

70

80

90 100

21142

T

R

0

20

40

60

80

100

120

0

10

203040

506070

80

90 100

T

21143

R

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

1.5

1.8

V

- 1.6

mV/K

Reverse current

100

µA

Junction capacitance

20

pF

Temperature coefficient of

φ

e

TK

φ

e

- 0.7

%/K

Angle of half intensity

ϕ

± 12

deg

Peak wavelength

λ

p

875

nm

Spectral bandwidth

Δλ

80

nm

Temperature coefficient of

λ

p

TK

λ

p

0.2

nm/K

Rise time

600

ns

300

ns

Fall time

600

ns

300

ns

Virtual source diameter

d

3.7

mm