TP0101K datasheet(2/4 Pages) VISHAY

номер детали	TP0101K

подробное описание детали	P-Channel 20-V (D-S) MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

2 / 4 page

Vishay Siliconix

SPICE Device Model TP0101K

www.vishay.com

Document Number: 72921

S-52397

Rev. B, 21-Nov-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −50 µA

0.85

On-State Drain Current

ID(on)

VDS = −5 V, VGS = −4.5 V

6.4

VGS = −4.5 V, ID = −0.58 A

0.43

0.42

Drain-Source On-State Resistance

rDS(on)

VGS = −2.5 V, ID = −0.50 A

0.63

0.64

Ω

Forward Transconductance

gfs

VDS = −5 V, ID = −0.58 A

1.3

Diode Forward Voltage

VSD

IS = −0.30 A, VGS = 0 V

−0.80

−0.90

Dynamic

Total Gate Charge

1.2

1.4

Gate-Source Charge

Qgs

0.30

Gate-Drain Charge

Qgd

VDS = − 6 V, VGS = − 4.5 V, ID = − 0.58 A

0.25

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD = − 6 V, RL = 10 Ω

ID ≅ − 0.58 A, VGEN = − 4.5 V, RG = 6 Ω

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

TP0101K датащи(PDF) 2 Page - Vishay Siliconix

TP0101K датащи(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

датащи скачать

ссылки URL