INA149

SBOS579A

– SEPTEMBER 2011 – REVISED NOVEMBER 2011

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PRODUCT

PACKAGE-LEAD

PACKAGE DESIGNATOR

PACKAGE MARKING

INA149

SOIC-8

D

INA149AID

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

INA149

UNIT

Supply voltage

(V+)

– (V–)

40

V

Input voltage range

Continuous

300

V

Common-mode and differential, 10 s

500

V

(V

–) – 0.3 to (V+) + 0.3

V

10

mA

Output short-circuit current duration

Indefinite

Operating temperature range

–55 to +150

°C

Storage temperature range

–65 to +150

°C

Junction temperature

+150

°C

Human body model (HBM)

1500

V

ESD rating

Charged device model (CDM)

1000

V

Machine model (MM)

100

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

supply rails should be limited to 10 mA or less.

2

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© 2011, Texas Instruments Incorporated

Product Folder Link(s): INA149