CSD75204W15 datasheet(5/9 Pages) TI

номер детали	CSD75204W15

подробное описание детали	Dual P-Channel NexFET??Power MOSFET

PDF	9 Pages

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производитель	TI [Texas Instruments]

домашняя страница	http://www.ti.com

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TJ − Case Temperature − °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

−75

−25

125

175

G007

ID1D2 = −1A

VGS = −4.5V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

−VSD − Source to Drain Voltage − V

G008

0.1

0.001

0.0001

0.01

TJ = 25°C

TJ = 125°C

−VD1D2 − DraintoDrainVoltage − V

G009

100

0.01

0.1

100

AreaLimited

byRD1D2(on)

1ms

10ms

100ms

SinglePulse

TypicalR

=161 C/W(minCu)

TJ − Junction Temperature − °C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

−50

−25

100

125

150

175

G011

CSD75204W15

www.ti.com

SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

Graphs are Per MOSFET at TA = 25°C, unless stated otherwise. Drain to Drain measurements are done with both MOSFETs

in series (common source configuration).

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Maximum Drain Current vs. Temperature

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