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SIP32413 датащи(PDF) 10 Page - Vishay Siliconix |
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SIP32413 датащи(HTML) 10 Page - Vishay Siliconix |
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10 / 12 page ![]() www.vishay.com 10 Document Number: 71437 S11-0366-Rev. A, 07-Mar-11 Vishay Siliconix SiP32413, SiP32414 DETAILED DESCRIPTION SiP32413 and SiP32414 are dual n-channel power MOSFETs designed as high side load switch with slew rate control to prevent in-rush current. Once enable the device charge pumps the gate of the power MOSFET to 5 V gate to source voltage while controlling the slew rate of the turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. For SiP32414, when disable the output discharge circuit turns on to help pull the output voltage to ground more quickly. For both parts, in disable mode, the reverse blocking circuit is activated to prevent current from going back to the input in case the output voltage is higher than the input voltage. Input voltage is needed for the reverse blocking circuit to work properly, it can be as low as VIN(min). APPLICATION INFORMATION Input Capacitor While bypass capacitors on the inputs are not required, 2.2 µF or larger capacitors for CIN is recommended in almost all applications. The bypass capacitors should be placed as physically close as possible to the device’s input to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the turn on slew rate time. There are no ESR or capacitor type requirement. Control The CNTRL pins are compatible with both TTL and CMOS logic voltage levels. Protection Against Reverse Voltage Condition Both SiP32413 and SiP32414 contain reverse blocking circuitries to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. Supply voltages as low as the minimum required input voltage are necessary for these circuitries to work properly. Thermal Considerations SiP32413 and SiP32414 are designed to maintain constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 2.4 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 84) the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance for the TDFN4 1.2 mm x 1.6 mm package, θJ-A = 84 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 655 mW. So long as the load current is below the 2.0 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.2 V and is equal to 75 m Ω. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 3400 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 75 mΩ x (1 + 0.0034 x (70 °C - 25 °C)) = 86.5 m Ω The maximum current limit is then determined by which in case is 2.75 A, assuming one switch turn on at a time. Under the stated input voltage condition, if the 2.75 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71437. 84 125 (max.) (max.) A A J A J T T T P - = - = - θ ) ( (max.) (max.) ON DS LOAD R P I < |
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